Etching solution for etching Cu and Cu/Ti metal layer of...

Details Etching solution for etching Cu and Cu/Ti metal layer of... Etching solution for etching Cu and Cu/Ti metal layer of...

2005-04-19

2005-04-19

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C436S169000, C436S149000, C436S800000

Reexamination Certificate

active

06881679

ABSTRACT:
An etching solution for etching one of a copper single metal layer and a copper (Cu)/titanium (Ti) double metal layer that serves as one of a gate electrode, a source electrode, and a drain electrode of a thin film transistor for a liquid crystal display (LCD) device includes oxone, fluoric compounds, one of a reducing agent and a weak oxidizing agent, an etching rate restrainer, KHF2, and water.

REFERENCES:
patent: 20020076930 (2002-06-01), Jo et al.

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