Etching a substrate: processes – Masking of a substrate using material resistant to an etchant
Patent
1995-06-01
1997-01-14
Powell, William
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
216 99, 216100, 216 13, 252 792, 252 793, B44C 122, C23C 100
Patent
active
055936016
ABSTRACT:
An etchant recipe suitable for the photo-etching process of the CrSi metalized film in the patterning of electronic circuitry. The etchant comprises 100 to 120 parts of 36.5 to 38% HCl, 1.0 to 2.0 parts of 48.8 to 49.2% HF, 0 to 10 parts of 30.0 to 32.0% H.sub.2 O.sub.2 and 50 to 100 parts of 85 to 87% H.sub.3 PO.sub.4. A 0.1 g/100 cc wetting agent is optionally added.
REFERENCES:
patent: 5256247 (1993-10-01), Watanabe et al.
patent: 5258093 (1993-11-01), Maniar
Hsieh Hsien-Fen
Hsu Ming-Teh
Industrial Technology Research Institute
Powell William
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