Etching processing method for a material layer

Details Etching processing method for a material layer Etching processing method for a material layer

2005-02-08

2005-02-08

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000, C438S723000

Reexamination Certificate

active

06852639

ABSTRACT:
The present invention provides a processing method that changes the given and unfavorable surface contour of a material layer to a predetermined, more favorable surface contour at least along a selected radial direction of the workpiece. Due to the fact that the etch process included into the processing method affects the whole workpiece simultaneously, a high throughput is achievable and the etching method is easily applied in an industrial setting, for example for the mass production of semiconductor products.

REFERENCES:
patent: 5690781 (1997-11-01), Yoshida et al.
patent: 5980766 (1999-11-01), Flamm et al.
patent: 6077787 (2000-06-01), Reinhard et al.
patent: 6329297 (2001-12-01), Balish et al.
patent: 6409933 (2002-06-01), Holland et al.
patent: 6562190 (2003-05-01), Kuthi et al.
patent: WO 0205308 (2002-01-01), None

Affiliated with

Also associated with

Rating

Etching processing method for a material layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching processing method for a material layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching processing method for a material layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3503152