Etching process which protects metal

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

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Details

438745, 148DIG51, H01L 21302

Patent

active

058011030

ABSTRACT:
The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising a buffered oxide etch.

REFERENCES:
patent: 4040897 (1977-08-01), Blish et al.
patent: 5591354 (1997-01-01), Patel et al.

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