Etching process for producing substantially undercut free silico

Details Etching process for producing substantially undercut free silico Etching process for producing substantially undercut free silico

1998-07-31

2000-06-06

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438714, 438719, 438737, H01L 2100

Patent

active

060718226

ABSTRACT:
A method of anisotropically plasma etching a silicon on insulator substrate wherein undercutting is substantially eliminated by utilizing as a finishing etch step a reactive ion etching process wherein the ion density is reduced in order to limit ion charging through different size recesses in order to uniformly etch in a vertical direction.

REFERENCES:
patent: 4528066 (1985-07-01), Merkling et al.
patent: 5336365 (1994-08-01), Goda et al.
patent: 5501893 (1996-03-01), Laermer et al.
patent: 5854138 (1998-12-01), Roth et al.
patent: 5900162 (1999-05-01), Kawahara et al.

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