Etching process for decreasing mask defect

Details Etching process for decreasing mask defect Etching process for decreasing mask defect

2007-05-08

2007-05-08

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S717000, C438S735000, C438S736000

Reexamination Certificate

active

11161960

ABSTRACT:
The present invention provides an etching process for decreasing mask defect. The process comprises providing a substrate, and sequentially forming a thin film layer, a mask, and a photoresist on the surface of the substrate. Then the photoresist is trimmed by a bromide compound, and a first etching process is performed to transfer patterns from the photoresist to the mask. A strip process is performed to strip photoresist by mixing gases that include fluorine. Finally, a second etching process is performed to transfer the pattern from patterned mask to the thin film layer.

REFERENCES:
patent: 2004/0038436 (2004-02-01), Mori et al.
patent: 2006/0205223 (2006-09-01), Smayling

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