Etching a substrate: processes – Forming or treating mask used for its nonetching function
Patent
1994-09-02
1996-06-18
Powell, William
Etching a substrate: processes
Forming or treating mask used for its nonetching function
216 41, 216 56, B44C 122, C23F 102
Patent
active
055269508
ABSTRACT:
An etching process is disclosed which is suited for manufacturing color selecting mechanisms in wide scope of specifications without need of complicated process of manufacture.
The etching process comprises the steps of (a) forming an etching resist layer (20) on the front surface (10A) of a work (10) and also forming a protective layer (12) on the back surface (10B), (b) patterning the etching resist layer (12) to form a first opening (22) and a second opening (24) smaller than and near the first opening, and (c) etching the work to form a slit zone (32) under the first opening (22) and a recess (34) under the second opening (24) while removing at least a portion (10C) of the work spacing apart the slit zone (32) and the recess (34), thereby forming an electron beam passage slit (30) having a greater opening area defined on the side of the front surface (10A) by the slit zone (32) and the recess (34). (See FIG. 3 )
REFERENCES:
patent: 3179543 (1965-04-01), Marcelis
patent: 3329541 (1967-07-01), Mears
patent: 3679500 (1972-07-01), Kubo et al.
patent: 3929532 (1975-12-01), Kuzminski
Patent Abstracts of Japan, vol. 004, No. 011 (E-168), 26 Jan. 1980 & JP-A-54 152960 (Mitsubishi Electric Corp.) 1 Dec. 1979.
Shina Sumito
Tago Koichi
Takei Shinzo
Powell William
Sony Corporation
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