Etching process and patterning process

Details Etching process and patterning process Etching process and patterning process

2007-03-27

2007-03-27

Norton, Nadine (Department: 1765)

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

C216S077000, C156S922000, C156S922000, C359S291000, C430S011000, C430S316000, C430S317000, C438S707000, C438S717000

Reexamination Certificate

active

10711838

ABSTRACT:
An etching process is described. A material layer having a bottom anti-reflection coating (BARC) and a patterned photoresist layer thereon is provided. An etching step is performed to the BARC using the patterned photoresist layer as a mask. A cleaning step is performed to remove the polymer formed on the surface of the patterned photoresist layer. Thereafter, another etching step is performed to the material layer using the patterned photoresist layer as a mask.

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Wolf, Silicon Processing for the VLSI Era, 2002, Lattice Press, vol. 4, p. 249.

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