Etching optical surfaces on GaAs

Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge

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Details

20412975, C25F 312, C25F 314

Patent

active

045766916

ABSTRACT:
Photoelectrochemical etching of gallium arsenide in highly alkaline aqueous solution yields optically smooth etched surfaces suitable for many optical devices. Higher optical quality is obtained for lower irradiation energy provided sufficient energy is available to produce holes in the valence band.

REFERENCES:
patent: 4369099 (1983-01-01), Kohl
patent: 4389291 (1983-06-01), Kohl
patent: 4404072 (1983-09-01), Kohl

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