Etching of Ti-W for C4 rework

Details Etching of Ti-W for C4 rework Etching of Ti-W for C4 rework

1996-10-31

1998-06-02

Jones, Deborah

Compositions

Etching or brightening compositions

252 792, 438754, C09K 1300

Patent

active

057594376

ABSTRACT:
A chemical etchant for the removal of titanium-tungsten containing structures from the semiconductors and a method for removing the titanium-tungsten. The etchant comprising a solution of hydrogen peroxide, a salt of EDTA, and an acid, the acid capable of preventing the deposition of tin oxide. The method of removal comprises first obtaining a wafer containing titanium-tungsten. Second, immersing the wafer having titanium-tungsten thereon for a predetermined period of time in an etchant bath comprising a solution of hydrogen peroxide, a salt of EDTA and an acid, the acid capable of preventing the deposition of tin oxide. Third, removing the treated wafer and rinsing the treated wafer and lastly, drying the wafer.

REFERENCES:
patent: 4415606 (1983-11-01), Cynkar et al.
patent: 4787958 (1988-11-01), Lytle
patent: 4814293 (1989-03-01), Van Oekel
patent: 5462638 (1995-10-01), Datta et al.
patent: 5462891 (1995-10-01), Okada
patent: 5508229 (1996-04-01), Baker

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