Etching of optical surfaces

Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge

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20412965, 20412975, C25F 312, C25F 314

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044154143

ABSTRACT:
An etching process is described which can etch geometrical shapes on the surface of an n-type or intrinsic compound semiconductor and yield surfaces of optical quality without further processing. The etching process is an electrochemical process where etching is proportional to light intensity. The process involves applying a potential to the compound semiconductor while immersed in an electrolytic solution and irradiating the surface to be etched with light in a certain energy range. The electrolytic solution contains hydrofluoric acid. The distribution of light intensity and ray direction is selected to produce the desired geometrical shape. Particularly advantageous is that the surfaces produced are of optical quality. For example, lenses produced by the etching process exhibit surfaces of optical quality. Further, the process can be carried out on all the lenses on a wafer simultaneously without attention to individual devices. This is highly desirable economically. Also, the lenses produced are integral parts of the light emitting diode.

REFERENCES:
patent: 3041258 (1962-06-01), Sikina
patent: 3728236 (1973-04-01), Weller
patent: 3954523 (1976-05-01), Magdo
patent: 4351706 (1982-09-01), Chappell
Applied Physics Letters 39(1), p. 76 (1981).
Infrared Physics, 6, 1 (1966), by W. N. Carr.
Patent Application Kohn et al. 5--5, Ser. No. 223,356, filed Jan. 8, 1981.

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