Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1991-08-30
1993-05-11
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250307, 365151, H01J 37305
Patent
active
052104257
ABSTRACT:
A process for etching with an atomic force microscope using a two-dimensional metal chalcogenide as the substrate, is disclosed.
REFERENCES:
patent: 4724318 (1988-02-01), Binnig
patent: 4987312 (1991-01-01), Eigler
patent: 5021672 (1991-06-01), Parkinson
patent: 5138174 (1992-08-01), Tang
Weisenhorn et al., Biophys. J., vol. 58, pp. 1251-1258, Nov. (1990).
Weisenhorn et al., Science, vol. 247, pp. 1330-1333, Mar. 16, 1990.
Wickramasinghe, H. K., Scientific American, pp. 98-105, Oct. (1989).
Hansma et al., Science, 242, Oct. 14, 1988, pp. 209-216.
Gould et al., J. Vac. Sci. Technol. A, 8(1), Jan./Feb. (1990), pp. 369-373.
Rugar et al., Physics Today, pp. 23-30, Oct. (1990).
Delawski Edward J.
Parkinson Bruce A.
Berman Jack I.
E. I. Du Pont de Nemours and Company
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