Etching of III-V semiconductor materials with H.sub.2 S in the p

Details Etching of III-V semiconductor materials with H.sub.2 S in the p Etching of III-V semiconductor materials with H.sub.2 S in the p

1976-08-27

1977-08-02

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 136 89TF, 136 89CD, 148174, 156612, 156646, 357 16, 357 30, 357 61, 427 85, 427 87, H01L 21205, H01L 21302, H01L 3106

Patent

active

040393577

ABSTRACT:
A hydrogen transport process for cleaning the surface of an indium or gallium based semiconductor material and for depositing n-type cadmium sulfide on the cleaned semiconductor material is disclosed. The cleaning and deposition can be accomplished in sequence or simultaneously. The process entails adding hydrogen sulfide to a hydrogen gas flow in a chemical vapor deposition process. Single crystalline photovoltaic cells of p-InP
-CdS with a 13.5% efficiency have been reproducibly fabricated. An efficiency of 4.6% has been obtained with a thin layer polycrystalline p-InP
-CdS cell. Additionally, a p-GaAs
-CdS heterodiode cell has been produced.

REFERENCES:
patent: 3312571 (1967-04-01), Ruehrwein
patent: 3392069 (1968-07-01), Merkel et al.
patent: 3393103 (1968-07-01), Hellbardt et al.
patent: 3679502 (1972-07-01), Hays
patent: 3697338 (1972-10-01), Asai et al.
patent: 3988172 (1976-10-01), Bachmann et al.
Yoshikawa et al., "Growth and Properties of CdS-Technique", J. Apol. Phys., vol. 45, No. 8, Aug. 1974, pp. 3523-3529.
Yoshikawa et al., "Optical Properties of Hetero-Epitaxial CdS Films", Japanese Journal of Applied Physics, vol. 13, No. 9, Sept. 1974, pp. 1353-1361.
Ito et al., "Photovoltaic Effect at n CdS-p InP Heterojunctions".
Ibid., vol. 14, No. 8, 1975, pp. 1259-1260.
Chu et al., "Etching of Germanium with-Hydrogen Sulfide", J. Electrochem. Soc., vol. 116, No. 9, Sept. 1969, pp. 1261-1263.

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