Etching of group III-V semiconductors

Details Etching of group III-V semiconductors Etching of group III-V semiconductors

1972-08-15

1976-03-30

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Methods

Surface bonding and/or assembly therefor

29580, 156 17, 252 795, 427 88, H01L 750

Patent

active

039473040

ABSTRACT:
Group III-V compound semiconductor devices with attached gold conductor areas are etched using a basic ferricyanide etchant. The etchant is an aqueous solution containing ferricyanide ions in a concentration from 0.8 molar to 1.2 molar and sodium or potassium hydroxide in a concentration from 0.3 molar to 1.5 molar. This etchant rapidly removes the semiconductor material leaving smooth surfaces, while leaving the gold conductors and areas protected by oxide layers essentially intact. The use of titanium layers as etching masks, deposited for example by evaporating or sputtering through a removable mask, is also disclosed.

REFERENCES:
patent: 3674580 (1972-07-01), Erdman
patent: 3716429 (1973-02-01), Sebastian et al.

Affiliated with

Also associated with

Rating

Etching of group III-V semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching of group III-V semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching of group III-V semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-519341