Etching of group III-V semiconductors

Adhesive bonding and miscellaneous chemical manufacture – Methods – Surface bonding and/or assembly therefor

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29580, 156 17, 252 795, 427 88, H01L 750

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active

039473040

ABSTRACT:
Group III-V compound semiconductor devices with attached gold conductor areas are etched using a basic ferricyanide etchant. The etchant is an aqueous solution containing ferricyanide ions in a concentration from 0.8 molar to 1.2 molar and sodium or potassium hydroxide in a concentration from 0.3 molar to 1.5 molar. This etchant rapidly removes the semiconductor material leaving smooth surfaces, while leaving the gold conductors and areas protected by oxide layers essentially intact. The use of titanium layers as etching masks, deposited for example by evaporating or sputtering through a removable mask, is also disclosed.

REFERENCES:
patent: 3674580 (1972-07-01), Erdman
patent: 3716429 (1973-02-01), Sebastian et al.

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