Etching of gallium stains in liquid phase epitoxy

Details Etching of gallium stains in liquid phase epitoxy Etching of gallium stains in liquid phase epitoxy

1979-12-20

1981-03-17

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148172, 156662, 252 792, H01L 21208, H01L 21306

Patent

active

042565200

ABSTRACT:
A method of treating semiconductor substrate comprising the step of
after epitaxial growth of III-V compound semiconductor layers on a substrate by a liquid phase epitaxial growth method using gallium as solvent,
the substrate is treated by an etchant comprising phosphoric acid, acetic acid and nitric acid thereby selectively removing residue stains of gallium on the surface of the substrate.

REFERENCES:
patent: 2871110 (1959-01-01), Stead
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patent: 3639975 (1972-02-01), Tefft
patent: 3679501 (1972-07-01), Chicotkg
patent: 3697318 (1972-10-01), Feinberg et al.
patent: 3767494 (1973-10-01), Muraoka et al.
patent: 3890169 (1975-06-01), Schwartz et al.
patent: 3892606 (1975-07-01), Chappelow et al.
patent: 3978428 (1976-08-01), Burnham et al.
patent: 4100014 (1978-07-01), Kuh-Kuhnenfeld et al.
patent: 4108715 (1978-08-01), Ishikawa et al.

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