Etching nitride and anti-reflective coating

Details Etching nitride and anti-reflective coating Etching nitride and anti-reflective coating

2011-03-29

2011-03-29

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S725000, C257SE21214

Reexamination Certificate

active

07915175

ABSTRACT:
A method of forming a semiconductor structure comprises etching an anti-reflective coating on a substrate with a first plasma comprising bromine and oxygen; and etching a nitride layer on the substrate with a second plasma comprising bromine and oxygen.

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