Etching methods and apparatus for producing semiconductor...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S711000, C438S709000, C438S714000, C438S734000

Reexamination Certificate

active

07030027

ABSTRACT:
A multi-layered film on a semiconductor substrate is etched with a multi-step etching process by sequentially providing a plurality of process gases having different compositions in a chamber. A plasma discharge to excite the process gases is continued without an interruption during a switch to a different process gas. A relationship between different process gases desirable for the continuous plasma excitation is also disclosed. An apparatus suitable to practice this continuous plasma excitation process includes a process gas supply system having a gas reservoir. A mixture of at least two component gases is prepared and reserved in the reservoir, and is supplied to the etching chamber when it is needed.

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Process Data Example for Hitachi M308 Microwave Plasma Etcher.

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