Etching a substrate: processes – Masking of a substrate using material resistant to an etchant
Reexamination Certificate
2006-10-24
2006-10-24
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
C216S062000, C216S079000, C438S695000, C438S708000, C438S723000, C438S725000
Reexamination Certificate
active
07125496
ABSTRACT:
A method of etching is disclosed using a photoresist etch barrier formed by an exposure with a light source of which wavelength is in the range of 157 nm to 193 nm, such as an argon fluoride(ArF) laser or fluorine laser(F2laser), the method includes the steps of coating a photoresist layer on a etch target layer; forming photoresist pattern by developing the photoresist layer after exposing the photoresist layer with a light source of which wavelength is in the range of 157 nm to 193 nm; forming a polymer layer and etching a portion of the etch target layer simultaneously with a mixture of fluorine-based gas, an Ar gas and an O2gas, wherein the fluorine-based gas is CxFyor CaHbFc, and wherein x, y, a, b and c range from 1 to 10, respectively; and etching the etch target layer using the polymer layer and the photoresist pattern as the etch mask.
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Ahmed Shamim
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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