Etching method using hard mask in semiconductor device

Details Etching method using hard mask in semiconductor device Etching method using hard mask in semiconductor device

2007-05-10

2010-10-05

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

C438S592000, C438S618000, C438S622000, C438S637000, C438S706000, C257SE21311, C257SE21314

Reexamination Certificate

active

07807574

ABSTRACT:
An etching method in a semiconductor device includes forming a nitride-based first hard mask layer over a target etch layer, forming a carbon-based second hard mask pattern over the first hard mask layer, etching the first hard mask layer using the second hard mask pattern as an etch barrier to form a first hard mask pattern, cleaning a resultant structure including the first hard mask pattern, and etching the target etch layer using the second hard mask pattern as an etch barrier.

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