Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-05-18
2010-06-08
Tran, Binh X (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C438S714000, C438S725000, C438S758000, C216S067000, C216S074000, C216S079000
Reexamination Certificate
active
07732339
ABSTRACT:
An organic/inorganic hybrid film represented by SiCx-HyOz(x>0, y≧0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.
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Imai Shin-ichi
Kanegae Kenshi
Nakagawa Hideo
Costellia Jeffrey L.
Nixon & Peabody LLP
Panasonic Corporation
Tran Binh X
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