Etching method, program, computer readable storage medium...

Details Etching method, program, computer readable storage medium... Etching method, program, computer readable storage medium...

2006-01-12

2010-02-02

Deo, Duy-Vu N (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S723000

Reexamination Certificate

active

07655570

ABSTRACT:
A difference in etching rate between the coated silicon based insulating film and any of other kinds of silicon-based insulating films is reduced by using nitrogen gas as a part of the etching gas. Therefore, the underlying film may not be exposed to the etching gas for a long time, so that degradation or deterioration of the underlying film can be prevented.

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patent: 7018921 (2006-03-01), Ryu
patent: 2001-077086 (2001-03-01), None
patent: 2001-351974 (2001-12-01), None

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