Etching method of silicon wafer surface and etching apparatus of

Details Etching method of silicon wafer surface and etching apparatus of Etching method of silicon wafer surface and etching apparatus of

1996-05-30

1999-06-29

Wortman, Donna

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

156345, C23F 102, C23F 108

Patent

active

059168242

ABSTRACT:
A silicon wafer is held in an airtight chamber by a silicon wafer holder. The silicon wafer holder is cooled by a cooler. High purity nitric acid is stored in a storage container disposed in the airtight container. The storage container is heated by a heater, thereby producing nitric acid gas. The nitric acid gas is condensed on the surface of the silicon wafer so that a thin film is formed. Thus, the surface of the silicon wafer is rendered hydrophilic. Thereafter, high purity hydrofluoric acid is dropped on high purity nitric acid in the storage container by an acid dropper, thereby producing hydrofluoric acid gas. By introducing the hydrofluoric acid gas into the thin film formed on the surface of the silicon wafer, an etching is performed while maintaining the surface of the silicon wafer in a good condition.

REFERENCES:
patent: 3798061 (1974-03-01), Yamazaki
patent: 4902351 (1990-02-01), Kunze et al.
patent: 5129955 (1992-07-01), Tanaka
patent: 5242831 (1993-09-01), Oki
patent: 5395482 (1995-03-01), Onda et al.

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