Etching method for semiconductor silicon wafer

Details Etching method for semiconductor silicon wafer Etching method for semiconductor silicon wafer

2005-01-18

2005-01-18

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C216S002000, C216S093000, C216S099000

Reexamination Certificate

active

06844269

ABSTRACT:
An etchant and an etching method that contribute to prevention of metal contamination of a semiconductor silicon wafer, and a semiconductor silicon wafer in which metal contamination is extremely reduced, are provided. The etchant according to the present invention is prepared by immersing stainless steel in an alkali aqueous solution for not less than 10 hours. In the etching method according to the present invention, a semiconductor silicon wafer is etched by using the etchant. Thereby, the semiconductor silicon wafer according to the present invention, in which metal contamination is extremely reduced, is obtained.

REFERENCES:
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patent: A 3-1537 (1991-01-01), None
patent: A 5-291238 (1993-11-01), None
patent: A 10-310883 (1998-11-01), None
patent: A 11-162953 (1999-06-01), None
patent: A 2001-68444 (2001-03-01), None

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