Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1995-05-30
1998-01-06
Angebranndt, Martin
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438720, 438714, 438710, 438731, 20419235, 216 67, 216 75, 216 76, C23F 102
Patent
active
057054436
ABSTRACT:
A plasma-assisted dry etching process for etching of a metal containing material layer on a substrate to remove the metal containing material from the substrate, comprising (i) plasma etching the metal containing material and, (ii) contemporaneously with said plasma etching, contacting the metal containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal containing material, in relation to a corresponding plasma etching of the metal containing material layer on the substrate in the absence of the etch enhancing reactant metal material being contacted with the etch enhancing reactant.
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Gardiner Robin A.
Kirlin Peter S.
Stauf Gregory
Van Buskirk Peter C.
Advanced Technology & Materials Inc.
Angebranndt Martin
Elliott Janet R.
Hultquist Steven J.
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