Etching method for reducing cusping at openings

Details Etching method for reducing cusping at openings Etching method for reducing cusping at openings

1996-06-26

1999-04-13

Nuzzolillo, Maria

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438746, 438696, 438714, H01L 21302

Patent

active

058937587

ABSTRACT:
Disclosed is a method for selectively etching an opening in order to reduce cusping on and thereby widen the opening. The opening in one embodiment comprises a contact opening with a diffusion barrier liner layer deposited thereover that has formed cusps at the mouth of the contact opening. The contact opening is exposed to an etching agent at a low temperature and pressure such that the etching agent adheres to the contact opening. Photons are then directed towards the contact opening at an acute angle to the surface of the contact opening. The acute angle causes the surface of the contact opening to block the photons from contacting the bottom of the contact opening with a high flux density. The photons impart an energy to activate the etching agent, causing substantial etching of an upper portion of the contact opening, while a lower portion does not receive a significant flux density and is not substantially etched. Cusps are thereby removed from the mouth of the contact opening without substantially removing the material from the bottom of the contact opening. Further depositions can then be conducted without pinching off the mouth of the contact opening. A further embodiment is disclosed in which the foregoing method is used to planarize raised structural features with large openings without forming keyholes in the openings.

REFERENCES:
patent: 4832788 (1989-05-01), Nemiroff
patent: 5206187 (1993-04-01), Doan et al.
patent: 5368687 (1994-11-01), Sandhu et al.
patent: 5563095 (1996-10-01), Frey
patent: 5607601 (1997-03-01), Loper et al.

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