Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2007-06-05
2007-06-05
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C438S720000, C438S725000, C430S005000
Reexamination Certificate
active
11023577
ABSTRACT:
A reticle manufacturing method comprises a step of retreating side surfaces of a lift-off pattern to reduce an area of a wide pattern portion, a step of forming a wide convex pattern and a narrow convex pattern by etching a glass substrate (transparent substrate) while using a second mask pattern as a mask, a step of reducing an area of a first wide mask portion, a step of reducing at least an area of a second wide mask portion smaller than an area of the first wide mask portion, and a step of reducing an area of a wide light shielding portion by etching the wide light shielding portion while using the first wide mask portion as a mask.
REFERENCES:
patent: 5358807 (1994-10-01), Okamoto
patent: 5595844 (1997-01-01), Tomofuji et al.
patent: 5688617 (1997-11-01), Mikami et al.
patent: 5837405 (1998-11-01), Tomofuji et al.
patent: 6538740 (2003-03-01), Shiraishi et al.
patent: 7012671 (2006-03-01), Noguchi et al.
patent: 2003/0027366 (2003-02-01), Dulman et al.
patent: 01021450 (1989-01-01), None
patent: 04085814 (1992-03-01), None
Iwasaki, H., et al., “Fabrication of the 70-nm line patterns with ArF chromeless phase-shift masks,” Proceedings of SPIE, vol. 4754 (2002), pp. 384-395.
Ozawa Kiyoshi
Shirai Hisatsugu
Chen Kin-Chan
Fujitsu Limited
Westerman, Hattori, Daniels & Adrian , LLP.
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