Etching method for making a reticle

Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps

Reexamination Certificate

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C438S720000, C438S725000, C430S005000

Reexamination Certificate

active

11023577

ABSTRACT:
A reticle manufacturing method comprises a step of retreating side surfaces of a lift-off pattern to reduce an area of a wide pattern portion, a step of forming a wide convex pattern and a narrow convex pattern by etching a glass substrate (transparent substrate) while using a second mask pattern as a mask, a step of reducing an area of a first wide mask portion, a step of reducing at least an area of a second wide mask portion smaller than an area of the first wide mask portion, and a step of reducing an area of a wide light shielding portion by etching the wide light shielding portion while using the first wide mask portion as a mask.

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Iwasaki, H., et al., “Fabrication of the 70-nm line patterns with ArF chromeless phase-shift masks,” Proceedings of SPIE, vol. 4754 (2002), pp. 384-395.

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