Etching method for indium series compound semiconductors

Details Etching method for indium series compound semiconductors Etching method for indium series compound semiconductors

1994-08-01

1996-04-30

Clark, W. Robinson M.

Coating processes

Direct application of electrical, magnetic, wave, or...

Ion plating or implantation

427535, 1566251, B44C 122

Patent

active

055123317

ABSTRACT:
An etching method for an In series compound semiconductor includes etching in a plasma etching of a flowing mixture of a halogen and nitrogen, the flow ratio of halogen to nitrogen being lower than 1, and at a gas pressure below 0.5 mTorr. An etching method for an In series compound semiconductor includes etching in a plasma etching apparatus and a mixture of halogen/inactive gas
itrogen gas, the flow rate ratio of halogen/(halogen+inactive gas+nitrogen gas) being lower than 0.1, the flow rate ratio of nitrogen/(halogen+inactive gas+nitrogen gas) being above 0.1, and the gas pressure being below 0.5 mTorr. Etching at low ion energy produces good surface morphology, a vertical side surface configuration having an etched concave portion, and low damage.

REFERENCES:
patent: 5068007 (1991-11-01), Roger et al.
patent: 5304514 (1994-04-01), Nishibe et al.

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