Etching method for flattening a silicon substrate utilizing an a

Details Etching method for flattening a silicon substrate utilizing an a Etching method for flattening a silicon substrate utilizing an a

1976-10-05

1977-11-01

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29580, 29591, 156626, 156647, 156662, 357 20, 357 34, 357 48, 357 50, 357 60, H01L 21302, H01L 2120, H01L 2176

Patent

active

040564134

ABSTRACT:
An epitaxial silicon layer is grown on a principal surface of the (100) crystal face of a silicon single crystal having a depressed portion in the principal surface. The epitaxial silicon layer is flattened by etching, the epitaxial silicon layer being formed to a sufficient thickness so that the side surfaces of the crystal face (111) of a new depressed portion as viewed in a vertical section (the new depressed portion being formed in a surface of the epitaxial silicon layer in correspondence with the first-mentioned depressed portion) intersect at a level which is, at the lowest, the final plane of the etching. The etching is anisotropic etching with an alkali etchant, by which the epitaxial silicon layer is etched down to the final plane.

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Lawritzen, P., "Design and Characteazation of . . . Transistor" IEEE Trans. on Electron Devices, vol. ED-15, No. 8, Aug. 1968, pp. 569-576.
Wu, L. L., "Dopep P & N Pockets for Complementary FETS" I.B.M. Tech. Discl. Bull., vol. 15, No. 7, Dec. 1972, p. 2279.
Declercq, M. J., "New C-MOS Technology . . . Etching of Silicon" IEEE J. of Solid-State Circuits, vol. SC-10, No. 4, Aug. 1975, pp. 191-197.

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