Etching a substrate: processes – Masking of a substrate using material resistant to an etchant
Reexamination Certificate
2005-04-27
2009-02-03
Culbert, Roberts (Department: 1792)
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
C438S753000
Reexamination Certificate
active
07485238
ABSTRACT:
In a state in which respective portions of a quartz wafer have been masked by a plurality of kinds of mask layers that have respectively different etching rates, the quartz wafer is subjected to an etching process. Since the etching operation is started earlier at a first portion which is masked by the mask layer having a high etching rate, the amount of etching is increased at the first portion. In contrast, the start of the etching operation is delayed at a second portion which is masked by the mask layer having a low etching rate, and the amount of etching is reduced at the second portion. Thus, it becomes possible to form the quartz wafer into a desired shape.
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Nakata Hozumi
Satoh Syunsuke
Culbert Roberts
Daishinku Corporation
Wenderoth , Lind & Ponack, L.L.P.
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