Etching method, etched product formed by the same, and...

Etching a substrate: processes – Masking of a substrate using material resistant to an etchant

Reexamination Certificate

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C438S753000

Reexamination Certificate

active

07485238

ABSTRACT:
In a state in which respective portions of a quartz wafer have been masked by a plurality of kinds of mask layers that have respectively different etching rates, the quartz wafer is subjected to an etching process. Since the etching operation is started earlier at a first portion which is masked by the mask layer having a high etching rate, the amount of etching is increased at the first portion. In contrast, the start of the etching operation is delayed at a second portion which is masked by the mask layer having a low etching rate, and the amount of etching is reduced at the second portion. Thus, it becomes possible to form the quartz wafer into a desired shape.

REFERENCES:
patent: 4021276 (1977-05-01), Cho et al.
patent: 4473434 (1984-09-01), Poler
patent: 4981552 (1991-01-01), Mikkor
patent: 5420067 (1995-05-01), Hsu
patent: 5449903 (1995-09-01), Arney et al.
patent: 5738757 (1998-04-01), Burns et al.
patent: 6051866 (2000-04-01), Shaw et al.
patent: 6136243 (2000-10-01), Mehregany et al.
patent: 6458494 (2002-10-01), Song et al.
patent: 6534225 (2003-03-01), Flanders et al.
patent: 6636386 (2003-10-01), Boutaghou
patent: 2004/0074301 (2004-04-01), Kuisma et al.
patent: 57095633 (1982-06-01), None
patent: 62-065333 (1987-03-01), None
patent: 2057009 (1990-02-01), None
patent: 04-354332 (1992-12-01), None
patent: 05062964 (1993-03-01), None
patent: 5-315881 (1993-11-01), None
patent: 07-058345 (1995-03-01), None
patent: 08186458 (1996-07-01), None
patent: 08228122 (1996-09-01), None
patent: 10-294631 (1998-11-01), None
patent: 10-308645 (1998-11-01), None
patent: 11134703 (1999-05-01), None
patent: 2000004138 (2000-01-01), None
patent: 2000-341064 (2000-12-01), None
patent: 2001-156584 (2001-06-01), None
patent: 2002-76806 (2002-03-01), None
patent: 98/38736 (1998-09-01), None

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