Etching method and semiconductor device fabricating method

Details Etching method and semiconductor device fabricating method Etching method and semiconductor device fabricating method

2007-11-27

2007-11-27

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S700000, C438S701000, C438S702000, C438S690000, C438S694000, C216S018000

Reexamination Certificate

active

10721260

ABSTRACT:
An etching method for plasma-etching a low-k film, wherein the plasma etching is conducted under an etching gas atmosphere including a fluorocarbon gas, O2gas and Ar gas, and under the conditions of a pressure of 60 mTorr (7999.32 mPa) or higher and a high-frequency output (RF power) of 600 W or less.

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