Etching method and etching device

Details Etching method and etching device Etching method and etching device

2007-08-07

2007-08-07

Alanko, Anita (Department: 1765)

Etching a substrate: processes

Nongaseous phase etching of substrate

With measuring, testing, or inspecting

C216S092000

Reexamination Certificate

active

10839404

ABSTRACT:
An etching method and etching device are provided, enabling uniform rendering of the thickness of a film for processing on a wafer regardless of the film thickness profile thereof, and thereby enabling global planarizing of the wafer surface. In an etching method, the film thickness profile of the film for processing formed on the wafer is ascertained in advance, and wet etching is performed by discharging an etchant liquid L1at a thick portion of the film for processing; simultaneously with the discharge of the etchant liquid L1, a diluting liquid L2for the etchant liquid L1is discharged at a thin portion of the film for processing.

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