Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-11-18
2010-11-30
Culbert, Roberts (Department: 1716)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S718000, C216S075000, C216S079000
Reexamination Certificate
active
07842617
ABSTRACT:
The present invention is an etching method for performing an etching process in the presence of a plasma on an object to be processed in which a layer to be etched made of a tungsten-containing material is formed on a base layer made of a silicon-containing material in a process vessel capable of being evacuated to create therein a vacuum, wherein a chlorine-containing gas, an oxygen-containing gas, and a nitrogen-containing gas are used as an etching gas for performing the etching process.
REFERENCES:
patent: 4579623 (1986-04-01), Suzuki et al.
patent: 5880033 (1999-03-01), Tsai
patent: 6723652 (2004-04-01), Fukuda
patent: 2001/0008806 (2001-07-01), Kitagawa
patent: 10-116824 (1998-05-01), None
patent: 11-135481 (1999-05-01), None
patent: 2000-252259 (2000-09-01), None
patent: 2002-355550 (2002-12-01), None
patent: 2004-119781 (2004-04-01), None
patent: 2004-273532 (2004-09-01), None
patent: WO 02/80253 (2002-03-01), None
Notification of Transmittal of Copies of Translation of the International Preliminary Report on Patentability (Form PCT/IB/338) in connection with PCT/JP2005/021256, dated Jan. 2004.
International Preliminary Report on Patentability (Form PCT/IB/373) in connection with PCT/JP2005/021256, dated Jan. 2004.
Written Opinion of the International Searching Authority (Form PCT/ISA/237) in connection with PCT/JP2005/021256, dated Jan. 2004.
Culbert Roberts
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
LandOfFree
Etching method and etching apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Etching method and etching apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching method and etching apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4250742