Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1990-11-16
1992-11-03
Simmons, David A.
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
118723, 20429834, 20429837, 20429839, H01L 2100
Patent
active
051603985
ABSTRACT:
A reactive ion etching method is described in which a silicon compound film formed on an underlying layer or a substrate is etched through a mask layer by a two-stage procedure. In the two-stage procedure, part of the silicon compound film is first etched with a gas containing a hydrogen-free carbon fluoride gas at a high etching rated and then with a gas containing a hydrogen-containing carbon fluoride gas while reducing the damage on the underlying layer or substrate. The apparatus for carrying out the method is also disclosed.
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"CF.sub.4 RIE Pre-Etch During Etchback of Sidewall Formation", IBM Technical Disclosure Bulletin, vol. 29, No. 1, Jun. 1986, pp. 110-111.
Stocker, "Selective Reactive Ion Etching of Silicon Nitride on Oxide in a Multifacet (HEX) Plasma Etching Machine", Journal of Vacuum Science & Technology, vol. 7, No. 3, Part I, May/Jun. 1988, pp. 1145-1149.
Goudreau George
Simmons David A.
Sony Corporation
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