Etching method and apparatus

Details Etching method and apparatus Etching method and apparatus

2006-03-07

2008-11-18

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S724000, C257SE21218, C257SE21222

Reexamination Certificate

active

07452823

ABSTRACT:
An etching method, for selectively etching a silicon nitride film to a silicon oxide film by using a processing gas in a processing chamber including an electrode therein, includes the steps of mounting a target object having the silicon oxide film and the silicon nitride film onto the electrode and etching the silicon nitride film by introducing a gaseous mixture containing CF4gas, H2gas and N2gas as a processing gas into the processing chamber and applying a high frequency power of 0.20 W/cm2or less to the electrode while maintaining a pressure in the processing chamber to be equal to or smaller than 4 Pa.

REFERENCES:
patent: 6284664 (2001-09-01), Kawai
patent: 6838381 (2005-01-01), Hsu et al.
patent: 6872322 (2005-03-01), Chow et al.

Affiliated with

Also associated with

Rating

Etching method and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching method and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching method and apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4028704