Etching method

Details Etching method Etching method

1998-05-08

2000-04-18

Gulakowski, Randy

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

216 75, 438696, 438715, H01L 21302, C23F 112

Patent

active

060511532

ABSTRACT:
A method for etching. The etching process is to form an opening within the material layer on the substrate and then form a patterned layer on the material layer. An etching gas, an inert gas/hydrogen and an inert gas are pumped into the chamber. The inert gas is used to decrease the surface temperature of the patterned layer and a polymer thin film layer can be formed easily on the surface of the patterned layer. The opening is then formed by defining the material layer with the patterned layer. In addition, the thin film can not be formed on the bottom of the opening by raising the temperature of the substrate.

REFERENCES:
patent: 5296095 (1994-03-01), Nabeshima et al.
patent: 5476807 (1995-12-01), Lee et al.
patent: 5651856 (1997-07-01), Keller et al.
Takahashi K; Proc Symp. Dry Process, 1995, vol. 17th, pp. 237-242. Journal Code : Y o378A, Japan.

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