Etching method

Details Etching method Etching method

2006-10-24

2006-10-24

Deo, Duy-Vu N (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S714000, C438S725000

Reexamination Certificate

active

07125806

ABSTRACT:
An etching method comprises a step of forming a via hole structure based on a photoresist film layer (210) for forming a wiring pattern, a silicon oxide film layer (201) which is a hard mask layer formed under the photoresist film, and an organic Low-k film layer (203) formed under the hard mask layer, wherein in the step, the organic film layer and the organic Low-k film layer are etched by using a mixture gas of N2gas, H2gas, and a CF gas.

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Fukasawa et al., “Organic Low-k Film Etching Using N-H Plasma”, Proc. of Symposium on Dry Process 1999, pp. 221 to 226, particularly, pp. 222, 223; Fig. 9.

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