Etching method

Details Etching method Etching method

2005-01-18

2005-01-18

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S712000, C216S067000

Reexamination Certificate

active

06844265

ABSTRACT:
To provide an etching method for broadening a trench opening between patterns of an etching mask in a dry process. The etching method of a semiconductor substrate in which silicon and a silicon nitride film are exposed at least on a surface of the semiconductor substrate, comprises an oxidation step of oxidizing the silicon and the silicon nitride film from an exposed surface to a given film thickness by spraying the semiconductor substrate with substances excited by plasma discharge of O2gas as a reaction gas, and an etching step of etching the semiconductor substrate oxidized in the oxidation step by plasma using a reaction gas comprising at least O2gas and CH2F2gas.

REFERENCES:
patent: 4595601 (1986-06-01), Horioka et al.
patent: 5786276 (1998-07-01), Brooks et al.
patent: 5877032 (1999-03-01), Guinn et al.
patent: 6287699 (2001-09-01), Yasuda et al.
patent: 11-008223 (1999-01-01), None

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