Etching method

Details Etching method Etching method

2008-07-22

2008-07-22

Ahmed, Shamim (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

C216S041000, C216S057000, C216S067000, C438S710000, C438S745000

Reexamination Certificate

active

07402523

ABSTRACT:
A method for etching an insulation film through a patterned mask, includes the steps of etching the insulation film until just before an underlayer is about to be exposed by applying a plasma, and modifying a quality of a remaining film of the insulation film by applying another plasma which is different from the plasma used in the above etching process. The method further includes the process of removing the modified remaining film of the insulation film with a liquid chemical. The process of removing the modified remaining film can be also achieved by a dry etching method not employing a plasma.

REFERENCES:
patent: 7169440 (2007-01-01), Balasubramaniam et al.
patent: 2003/0040192 (2003-02-01), Kanegae
patent: 2003/0155657 (2003-08-01), Tonegawa et al.
patent: 2004/0009658 (2004-01-01), Aoki et al.
patent: 2005-33027 (2005-02-01), None

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