Etching metals using chlorine gas and hydrochloric gas in de-ion

Details Etching metals using chlorine gas and hydrochloric gas in de-ion Etching metals using chlorine gas and hydrochloric gas in de-ion

1997-04-30

1998-08-18

Breneman, R. Bruce

Etching a substrate: processes

Gas phase and nongaseous phase etching on the same substrate

216100, 216108, H01L 21306

Patent

active

057954925

ABSTRACT:
A metal, such as Platinum, is stripped from a wafer during processing of an integrated circuit. The wafer, typically within a cassette of wafers, is submerged in de-ionized water. The de-ionized water is, for example, held within a container made of quartz. Optimally, the de-ionized water is heated, for example, to a temperature of 80 degrees Centigrade. Chlorine gas and hydrochloric acid gas are bubbled into the de-ionized water to oxidize the metal.

REFERENCES:
patent: 4472236 (1984-09-01), Tanaka et al.
patent: 4832779 (1989-05-01), Fisher et al.
patent: 5674410 (1997-10-01), Nakajima et al.

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