Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2005-03-22
2005-03-22
Goudreau, George A. (Department: 1763)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S690000, C438S754000, C216S090000, C216S100000
Reexamination Certificate
active
06869889
ABSTRACT:
A metal carbide film may be etched in an etchant bath using sonication. The sonication may drive the reaction and, particularly, the gaseous byproducts in the form of carbon dioxide. Thus, the use of sonication invokes a favorable equilibrium to pattern metal carbide films, for example, for use as metal gate electrodes.
REFERENCES:
patent: 5057184 (1991-10-01), Gupta et al.
patent: 5245187 (1993-09-01), Kawase et al.
patent: 6303508 (2001-10-01), Alok
patent: 6375752 (2002-04-01), Otsuki et al.
patent: 6407014 (2002-06-01), Alok
“Effect of Ultrasonic Vibrations On the Anodic Dissolution of Hard Alloys”; Chaika, Elektronnaya Obrabotka Materialov; (1970); (23); abstract only.
Bacuita Terence
Brask Justin K.
Chau Robert S.
Datta Suman
Doczy Mark L.
Goudreau George A.
Intel Corporation
Trop Pruner & Hu P.C.
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