Etching material and etching method

Details Etching material and etching method Etching material and etching method

1996-04-26

1999-11-02

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438756, 216101, 216104, 216109, 252 793, H01L 21302, C09K 1300

Patent

active

059769882

ABSTRACT:
An alumina film, a silicon oxide film, and a silicon nitride film formed on a substrate containing a large amount of alumina are etched by using an etching material in which the concentration of ammonium fluoride, which is a component of BHF, is set low. Etching is performed by using an etching material that is an aqueous solution produced by mixing hydrofluoric acid, ammonium fluoride and water at a weight ratio of x:y:(100-x-y) where x and y satisfy a relationship y<-2x+10 (0<x.ltoreq.5, 0<y.ltoreq.10). 50% hydrofluoric acid on the market and 40% aqueous solution of ammonium fluoride are used.

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Shankoff, T.A. et al. "Controlling the interfacial oxide layerof Ti-Al contacts with the Cr03-H3P04 etch" J. Electrochem. Soc., vol. 125, No. 3, pp. 467-471 Mar. 1978.

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