Etching machine having lower electrode bias voltage source

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

31511121, H05H 100

Patent

active

061066605

ABSTRACT:
An installation for wafer etching that has an additional bias voltage applied to its lower electrode, comprising a central processing unit, a radio frequency generator, a matching box controller, a radio frequency sensor box, a matching box and an etching machine. The central processing unit is connected to the radio frequency generator and the matching box controller for controlling the generation of radio frequency power and the bias voltage provided by the matching box. The radio frequency sensor box receives the radio frequency power and transfers the radio frequency power to the matching box, while a signal is sent to the matching box controller for controlling the bias voltage supplied to the lower electrode. Consequently, the ions can have more kinetic energy resulting in a greater bombarding effect and the formation of polymer on the wafer is limited. Furthermore, the effect of helium loss can be minimized and down time of the etching machine can be greatly reduced. Hence, product stability can be increased as well.

REFERENCES:
patent: 5272417 (1993-12-01), Ohmi

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Etching machine having lower electrode bias voltage source does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching machine having lower electrode bias voltage source, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching machine having lower electrode bias voltage source will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-576300

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.