Etching liquid for controlling silicon wafer surface shape...

Details Etching liquid for controlling silicon wafer surface shape... Etching liquid for controlling silicon wafer surface shape...

2007-10-30

2007-10-30

Goudreau, George A. (Department: 1763)

Etching a substrate: processes

Nongaseous phase etching of substrate

Using film of etchant between a stationary surface and a...

C216S089000, C216S090000, C438S693000, C438S747000, C438S750000

Reexamination Certificate

active

11345009

ABSTRACT:
A method for manufacturing a silicon wafer includes a planarizing process13for polishing or lapping the upperside and lowerside surfaces of a thin disk-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process for dipping the silicon wafer into the etching liquid wherein silica powder is dispersed uniformly in an alkali aqueous solution, thereby etching the upperside and lowerside surfaces of the silicon wafer, and a both-side simultaneous polishing process16for polishing the upperside and lowerside surfaces of the etched silicon wafer simultaneously or a one-side polishing process for polishing the upperside and lowerside surfaces of the etched silicon wafer one after another, in this order.

REFERENCES:
patent: 5429711 (1995-07-01), Watanabe et al.
patent: 6189546 (2001-02-01), Zhang et al.
patent: 2005/0112893 (2005-05-01), Koyata et al.
patent: 2005/0148181 (2005-07-01), Koyata et al.

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