Etching device for semiconductor wafers

Details Etching device for semiconductor wafers Etching device for semiconductor wafers

1987-06-15

1989-05-09

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156627, 156662, 204260, 204261, 204263, 2041291, 204273, H01L 21306, C23F 102, A24F 1500, B65D 8510

Patent

active

048286443

ABSTRACT:
Work pieces are immersed in an etchant in a spaced contact free relationship with the electrodes of the system. The two electrodes are separated by a filter which prevents charge carrying particles dispersed in the etchant surrounding the electrode closest to the work pieces and which assume the same charge, from migrating to and contacting the more remote one. The etchant containing the particles is physically agitated whereby the distribution of the particles which transfer electrical energy to the work pieces and induce electrochemical etching thereof is unified.

REFERENCES:
patent: 3957615 (1976-05-01), Diefenbacher
patent: 3984303 (1976-10-01), Peters et al.
patent: 4073708 (1978-02-01), Hicks, Jr.
patent: 4121991 (1978-10-01), Miller et al.
patent: 4212714 (1980-07-01), Coker et al.
patent: 4521281 (1985-06-01), Kadija
patent: 4533443 (1985-08-01), Wrighton et al.
patent: 4615776 (1986-10-01), Sasaki et al.
M. Hirata et al, "A Silicon Diaphragm Formation for Pressure Sensor by Anodic Oxidation Etch-Stop", IEEE, 1985, pp. 287-290.
M. Yasuda et al, "Use of a Conductive Partation Plate for Enlargement of Effective Bed Thickness of Fluidized Bed Electrodes", Denki Gakkai Journal, vol. 51, No. 8, 1983, pp. 715, 716.

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