Etching apparatus and etching method for substrate bevel

Details Etching apparatus and etching method for substrate bevel Etching apparatus and etching method for substrate bevel

2007-04-27

2010-12-28

Such, Matthew W (Department: 2891)

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

With means applying electromagnetic wave energy or...

C216S071000

Reexamination Certificate

active

07858053

ABSTRACT:
In the bevel etching apparatus relating to the present invention, a substrate is inserted between electrically connected electrodes. A high-frequency power source is connected to the electrodes, and ground potential is applied to a support unit that supports the substrate. Gas (atmosphere) is supplied to the gap between the electrodes and the application of the high-frequency electric power to the electrodes causes the generation of atmospheric-pressure glow discharge between the electrode and the substrate. Bevel etching is performed by rotating the substrate along the circumferential direction in this condition. According to this construction, the bevel etching can be simultaneously performed to the front surface, the rear surface and the side of the substrate without causing any configuration change in the substrate.

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Japanese Office Action, with English translation, issued in Japanese Patent Application No. JP 2006-125936, mailed Apr. 11, 2008.

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