Etching agent, electronic device and method of manufacturing the

Details Etching agent, electronic device and method of manufacturing the Etching agent, electronic device and method of manufacturing the

1995-03-31

1998-02-03

Dang, Thi

Electrical connectors

Coupling part to receive fluorescent or neon lamp

Having curved tubular envelope

252 792, H01L 2100, C09K 1300

Patent

active

057144079

ABSTRACT:
An etching agent and an electronic device manufacturing method using the etching agent. The etching agent contains, in a solution, hydrofluoric acid at a concentration of 0.05 to 0.5 mol/l, and halooxoacid ions, represented by the formula (XO.sub.n).sup.p- (wherein X is a halogen element, n is 3, 4 or 6, p is 1, 2 or 3), at a concentration of at least 0.01 mol/l. An electronic device manufactured using the etching agent requires only a single etching step to etch both conductive layers (such as aluminum) as well as ohmic contact layers (a-Si).

REFERENCES:
patent: 4578419 (1986-03-01), Hall
patent: 5300463 (1994-04-01), Cathey et al.
patent: 5409569 (1995-04-01), Seki et al.
"Chemical Etching for the Evaluation of Hydrogenated Amorphous Silicon Films" by T.L. Chu and Shirley S. Chu (Appl. Phys. Lett. 48 (26), 30 Jun. 1986.

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