Etching a nitride-based heterostructure

Details Etching a nitride-based heterostructure Etching a nitride-based heterostructure

2006-02-21

2008-09-30

Pham, Thanh V (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

C438S711000, C438S714000, C438S718000, C438S735000, C438S737000, C438S740000, C438S751000, C438S924000, C438S508000, C257SE21086, C257SE21246, C257SE21403, C257SE21407, C977S755000

Reexamination Certificate

active

07429534

ABSTRACT:
An improved solution for producing nitride-based heterostructure(s), heterostructure device(s), integrated circuit(s) and/or Micro-Electro-Mechanical System(s) is provided. A nitride-based etch stop layer that includes Indium (In) is included in a heterostructure. An adjacent layer of the heterostructure is selectively etched to expose at least a portion of the etch stop layer. The etch stop layer also can be selectively etched. In one embodiment, the adjacent layer can be etched using reactive ion etching (RIE) and the etch stop layer is selectively etched using a wet chemical etch. In any event, the selectively etched area can be used to generate a contact or the like for a device.

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