Etched-multilayer phase shifting masks for EUV lithography

Details Etched-multilayer phase shifting masks for EUV lithography Etched-multilayer phase shifting masks for EUV lithography

2005-04-05

2005-04-05

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

06875543

ABSTRACT:
A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.

REFERENCES:
patent: 6645679 (2003-11-01), La Fontaine et al.
patent: 20030064296 (2003-04-01), Yan

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