Etched interposer for integrated circuit devices

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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Details

C438S112000, C438S118000, C438S701000, C438S708000, C257SE21219

Reexamination Certificate

active

07413995

ABSTRACT:
In one embodiment, a package-to-package stack is assembled comprising a first integrated circuit package, and a second integrated circuit package which are mechanically and electrically connected using an interposer. In one embodiment, the interposer106includes columnar interconnects which may be fabricated by etching a conductive member such as copper foil, for example. In one application, the pitch or center to center spacing of the columnar interconnects may be defined by masking techniques to provide an interconnect pitch suitable for a particular application. In yet another aspect, etching rates may be controlled to provide height to width aspect ratios of the columnar interconnects which are suitable for various applications.

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