Etched-facet ridge lasers with etch-stop

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S045010

Reexamination Certificate

active

07606277

ABSTRACT:
A photonic device incorporate an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.

REFERENCES:
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Behfar-Rad et al, “Monolithic AlGaAs-GaAs Single Quantum-Well Ridge Lasers Fabricated with Dry-Etched Facets and Ridges”, IEEE Journal of Quantum Electronics, May 1992, pp. 1227-1231, vol. 28.

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